Title :
Low threshold current 1.61 μm InGaAsP/InP tapered active layer multiquantum well laser with improved coupling to cleaved singlemode fibre
Author :
Lealman, I.F. ; Rivers, Lelsey J ; Perrin, S.D.
Author_Institution :
British Telecom Res. Labs., Ipswich
fDate :
6/9/1994 12:00:00 AM
Abstract :
The authors report low threshold current large spot size MQW BH lasers. Coupling losses to 10 μm core cleaved singlemode fibre down to 4.1 dB have been obtained for devices with threshold currents of 4.9 and 15 mA at 20 and 80°C, respectively
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical couplers; optical fibres; optical losses; semiconductor lasers; semiconductor quantum wells; 1.6 mum; 10 mum; 15 mA; 20 C; 4.1 dB; 4.9 mA; 80 C; InGaAsP-InP; InGaAsP/InP tapered active layer multiquantum well laser; MQW BH lasers; cleaved singlemode fibre; coupling losses; improved coupling; low threshold current; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940684
