• DocumentCode
    1101516
  • Title

    Low threshold current 1.61 μm InGaAsP/InP tapered active layer multiquantum well laser with improved coupling to cleaved singlemode fibre

  • Author

    Lealman, I.F. ; Rivers, Lelsey J ; Perrin, S.D.

  • Author_Institution
    British Telecom Res. Labs., Ipswich
  • Volume
    30
  • Issue
    12
  • fYear
    1994
  • fDate
    6/9/1994 12:00:00 AM
  • Firstpage
    973
  • Lastpage
    975
  • Abstract
    The authors report low threshold current large spot size MQW BH lasers. Coupling losses to 10 μm core cleaved singlemode fibre down to 4.1 dB have been obtained for devices with threshold currents of 4.9 and 15 mA at 20 and 80°C, respectively
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical couplers; optical fibres; optical losses; semiconductor lasers; semiconductor quantum wells; 1.6 mum; 10 mum; 15 mA; 20 C; 4.1 dB; 4.9 mA; 80 C; InGaAsP-InP; InGaAsP/InP tapered active layer multiquantum well laser; MQW BH lasers; cleaved singlemode fibre; coupling losses; improved coupling; low threshold current; threshold currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940684
  • Filename
    293076