Title :
A 3-ns GaAs 4K × 1-bit static RAM
Author :
Yokoyama, Naoki ; Onodera, Hiroyuki ; Shinoki, T. ; Ohnishi, Hiroaki ; Nishi, Hidetoshi
Author_Institution :
Fujitsu Laboratories, Ltd., Atsugi, Japan
fDate :
9/1/1985 12:00:00 AM
Abstract :
A 3-ns 700-mW GaAs 4K × 1-bit static RAM has been developed using tungsten-silicide-gate self-aligned technology with a minimum design rule of 1.5 µm. A GaAs 1K × 1-bit static RAM, developed using the same technology, affords 1.0-ns minimum address access time and 300-mW power dissipation.
Keywords :
Capacitance; Circuits; Current-voltage characteristics; Decoding; FETs; Gallium arsenide; MESFETs; Metallization; Random access memory; Read-write memory;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22200
