Title :
Analytic intrinsic model based parasitic extraction method for HEMTs
Author :
Kim, Byung-Sung ; Nam, Seokho ; Seo, K.-S.
Author_Institution :
Dept. of Electron. Eng., Seoul Nat. Univ.
fDate :
6/9/1994 12:00:00 AM
Abstract :
The parasitic elements for HEMTs are extracted using an iterative technique based on the analytic intrinsic model instead of the equivalent circuit. Only two point S-parameter measurements under the pinched FET condition and zero gate bias are needed. The S-parameter simulation shows the validity of the proposed method
Keywords :
S-parameters; equivalent circuits; high electron mobility transistors; iterative methods; semiconductor device models; HEMTs; S-parameter simulation; analytic intrinsic model; iterative technique; parasitic extraction method; pinched FET condition; two point S-parameter measurements; zero gate bias;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940638
