Title :
YBCO thin films on sapphire with an epitaxial MgO buffer
Author :
Berezin, A.B. ; Yuan, C.W. ; de Lozanne, A.L. ; Garrison, S.M. ; Barton, R.W.
Author_Institution :
Dept. of Phys., Texas Univ., Austin, TX, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
The authors have developed a process for growing as-deposited c-axis YBCO thin films on R-plane sapphire using an epitaxial buffer of electron-beam-evaporated MgO. The authors discuss the structural and electrical properties of these films and describe the process parameters necessary for epitaxial growth of MgO on sapphire. A subsequent YBCO deposition yields a superconducting film with high transition temperature and critical current. While the YBCO is fully c-axis oriented, plane epitaxy is poor and so is RF surface resistance. Work in progress on a step-edge YBCO junction on MgO is mentioned
Keywords :
barium compounds; electron beam deposition; epitaxial layers; high-temperature superconductors; magnesium compounds; superconducting thin films; yttrium compounds; Al2O3; R-plane sapphire; RF surface resistance; Y-Ba-Cu-O thin films; c-axis oriented; critical current; electrical properties; electron-beam-evaporated; epitaxial MgO buffer; epitaxial growth; high temperature superconductors; high transition temperature; junction; step-edge; structural properties; Critical current; Electric resistance; Epitaxial growth; Radio frequency; Superconducting films; Superconducting thin films; Superconducting transition temperature; Surface resistance; Transistors; Yttrium barium copper oxide;
Journal_Title :
Magnetics, IEEE Transactions on
