Title :
A semi-two-dimensional numerical scheme for solving impurity profile in semiconductors
Author :
Yang, Y.Y. ; Kyung, C.M.
Author_Institution :
Korea Advanced Institute of Science and Technology, Seoul, Korea
fDate :
9/1/1985 12:00:00 AM
Abstract :
An efficient numerical scheme for obtaining the two-dimensional impurity profile in semiconductors due to thermal diffusion is described. A unique combination of the alternating direction implicit (ADI) method and Gaussian elimination has resulted in a reduction of CPU time for most diffusion processes by a factor of ≥ 3, compared to other iteration schemes such as successive overrelaxation (SOR) or Stone´s iterative method without additional storage requirement.
Keywords :
Central Processing Unit; Circuit simulation; Computational modeling; Diffusion processes; Electron devices; Insulation; Semiconductor impurities; Space technology; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22214
