Title :
High-quality InGaAs/InP multiquantum-well structures on Si fabricated by direct bonding
Author :
Mori, Kazuo ; Tokutome, Keiichi ; Nishi, Kentaro ; Sugou, S.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki
fDate :
6/9/1994 12:00:00 AM
Abstract :
High-quality InGaAs/InP multiquantum-well (MQW) structures have been successfully fabricated on Si substrates by direct bonding. These structures were first grown on InP substrates, then bonded at 700°C on to Si substrates with buffer layers. The etch-pit densities of the InP surfaces are significantly low, -10 cm-2, the lowest values ever reported. Furthermore, strong relative photoluminescence intensity from the MQW structures, over 70% of that before bonding, is obtained
Keywords :
III-V semiconductors; dislocations; elemental semiconductors; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor quantum wells; silicon; substrates; wafer bonding; 700 C; InGaAs-InP-Si; InP; InP substrates; MQW structures; Si; Si substrates; buffer layers; direct bonding; etch-pit densities; multiquantum-well; photoluminescence intensity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940657
