DocumentCode :
1101785
Title :
Large Stark effects for transitions from local states to global states in quantum well structures
Author :
Yuh, P.F. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume :
25
Issue :
7
fYear :
1989
fDate :
7/1/1989 12:00:00 AM
Firstpage :
1671
Lastpage :
1676
Abstract :
The electric-field dependence of the optical absorption for the type of quantum well structure in which one or more small wells are embedded in a big well is discussed. In such structures, local energy states confined by the small well(s) and global states confined by the big well have different electric-field dependences while their wave functions remain overlapped. Thus, a large Stark effect (large energy shift and oscillator strength) can be achieved for the optical transition from a local state to a global state. This concept of using the local and global states can be applied to both interband and intersubband transitions. For intersubband transitions, a typical 10-20 meV shift is predicted, compared to a reported 1.1 meV blue shift at the field 30 kV/cm. For interband transitions, the Stark shift is larger than that in the single quantum wells
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; gallium arsenide; localised electron states; oscillator strengths; semiconductor quantum wells; AlGaAs-GaAs; electric-field dependence; global states; interband transitions; intersubband transitions; large Stark effects; large energy shift; local energy states; optical absorption; optical transition; oscillator strength; quantum well structures; wave functions; Energy states; Excitons; Gallium arsenide; Local oscillators; Optical saturation; Optical superlattices; Potential well; Shape; Stark effect; Wave functions;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.29310
Filename :
29310
Link To Document :
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