Title :
Low noise AlInAs/InGaAs HEMT using WSi ohmic contact
Author :
Yoshida, Norihiro ; Yamamoto, Yusaku ; Katoh, Kentaroh ; Minami, Hisataka ; Kitano, Toshihiko ; Takano, Hirotaka ; Sonoda, Takuji ; Takamiya, S. ; Mitsui, S.
Author_Institution :
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo
fDate :
6/9/1994 12:00:00 AM
Abstract :
A 0.15 μm T-shaped gate AlInAs/InGaAs HEMT with excellent RF performance has been developed using refractory WSi non-alloyed ohmic contacts. An extremely low noise figure of 0.8 dB with an associated gain of 8.0 dB has been achieved at 40 GHz for an SiON-passivated device
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; ohmic contacts; semiconductor device noise; solid-state microwave devices; tungsten compounds; 0.15 micron; 40 GHz; 8 dB; HEMT; RF performance; SiON; SiON-passivated device; T-shaped gate; WSi ohmic contact; WSi-AlInAs-InGaAs; low noise device; refractory nonalloyed contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940633
