• DocumentCode
    1101816
  • Title

    New method of modelling a multipeak resonant tunnelling diode

  • Author

    Huang, C.Y. ; Morris, James E. ; Su, Y.K. ; Kuo, T.H.

  • Author_Institution
    Dept. of Electr. Eng., State Univ. of New York, Binghamton, NY
  • Volume
    30
  • Issue
    12
  • fYear
    1994
  • fDate
    6/9/1994 12:00:00 AM
  • Firstpage
    1012
  • Lastpage
    1013
  • Abstract
    The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated
  • Keywords
    equivalent circuits; resonant tunnelling devices; semiconductor device models; tunnel diodes; I-V characteristics; modelling; multipeak RTD; resonant tunnelling diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940636
  • Filename
    293102
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1101816