Title :
Simple method for extracting the difference between the drain and source series resistances in MOSFETs
Author :
Ortiz-Conde, Adelmo ; Liou, Juin J. ; Wong, Wing Kee ; Garcia Sanchez, F.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL
fDate :
6/9/1994 12:00:00 AM
Abstract :
A simple method for extracting the difference between the drain and source series resistances (Rd-Rs) in MOSFETs is presented. This method is applicable for n- and p-channel MOSFETs with any channel length. The results show that the magnitude of (Rd -Rs) increases with the drain current
Keywords :
characteristics measurement; extrapolation; insulated gate field effect transistors; drain series resistances; empirical fittings; n-channel MOSFET; p-channel MOSFET; source series resistances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940681
