• DocumentCode
    1101825
  • Title

    Simple method for extracting the difference between the drain and source series resistances in MOSFETs

  • Author

    Ortiz-Conde, Adelmo ; Liou, Juin J. ; Wong, Wing Kee ; Garcia Sanchez, F.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL
  • Volume
    30
  • Issue
    12
  • fYear
    1994
  • fDate
    6/9/1994 12:00:00 AM
  • Firstpage
    1013
  • Lastpage
    1015
  • Abstract
    A simple method for extracting the difference between the drain and source series resistances (Rd-Rs) in MOSFETs is presented. This method is applicable for n- and p-channel MOSFETs with any channel length. The results show that the magnitude of (Rd -Rs) increases with the drain current
  • Keywords
    characteristics measurement; extrapolation; insulated gate field effect transistors; drain series resistances; empirical fittings; n-channel MOSFET; p-channel MOSFET; source series resistances;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940681
  • Filename
    293103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1101825