A carrier injection type optical switch in GaAs using free carrier plasma dispersion with wavelength range from 1.06 to 1.55 μm

Author

Ito, Fumihiko ; Matsuura, Masaaki ; Tanifuji, Tadatoshi

Author_Institution

NTT Transmission Syst. Lab., Kanagawa, Japan

Volume

25

Issue

7

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

1677

Lastpage

1681

Abstract

The switching current for the device is about 90 mA at all in-range wavelengths. Its broad wavelength range is suitable for optical signal-processing applications in wavelength-division multiplexing transmission systems. High coupling efficiency to a single-mode fiber is achieved by using a small-Δ waveguide structure with carrier blocking layers. The effective refractive index change in the waveguide per unit of the injected current density is doubled by the carrier blocking layers without reducing coupling efficiency

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; integrated optics; optical communication equipment; optical switches; optical waveguide components; refractive index; 1.06 to 1.55 micron; 90 mA; AlGaAs-GaAs; broad wavelength range; carrier blocking layers; carrier injection type optical switch; coupling efficiency; effective refractive index; free carrier plasma dispersion; injected current density; optical signal-processing applications; single-mode fiber; switching current; waveguide structure; wavelength-division multiplexing transmission systems; Couplings; Gallium arsenide; Optical fiber devices; Optical refraction; Optical switches; Optical variables control; Optical waveguides; Refractive index; Waveguide transitions; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.29311

Filename

29311