Title :
A carrier injection type optical switch in GaAs using free carrier plasma dispersion with wavelength range from 1.06 to 1.55 μm
Author :
Ito, Fumihiko ; Matsuura, Masaaki ; Tanifuji, Tadatoshi
Author_Institution :
NTT Transmission Syst. Lab., Kanagawa, Japan
fDate :
7/1/1989 12:00:00 AM
Abstract :
The switching current for the device is about 90 mA at all in-range wavelengths. Its broad wavelength range is suitable for optical signal-processing applications in wavelength-division multiplexing transmission systems. High coupling efficiency to a single-mode fiber is achieved by using a small-Δ waveguide structure with carrier blocking layers. The effective refractive index change in the waveguide per unit of the injected current density is doubled by the carrier blocking layers without reducing coupling efficiency
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; integrated optics; optical communication equipment; optical switches; optical waveguide components; refractive index; 1.06 to 1.55 micron; 90 mA; AlGaAs-GaAs; broad wavelength range; carrier blocking layers; carrier injection type optical switch; coupling efficiency; effective refractive index; free carrier plasma dispersion; injected current density; optical signal-processing applications; single-mode fiber; switching current; waveguide structure; wavelength-division multiplexing transmission systems; Couplings; Gallium arsenide; Optical fiber devices; Optical refraction; Optical switches; Optical variables control; Optical waveguides; Refractive index; Waveguide transitions; Wavelength division multiplexing;
Journal_Title :
Quantum Electronics, IEEE Journal of
