DocumentCode :
1101913
Title :
Simulation of critical IC-fabrication steps
Author :
Pichler, Peter ; Jüngling, Werner ; Selberherr, Siegfried ; Guerrero, Edgar ; Pötzl, Hans W.
Author_Institution :
Institut für Allegemeine Elektrotechnik und Elektronik, Vienna, Austria
Volume :
32
Issue :
10
fYear :
1985
fDate :
10/1/1985 12:00:00 AM
Firstpage :
1940
Lastpage :
1953
Abstract :
Due to the advances in device miniaturization it is often necessary to get a better understanding of the physical fabrication processes by applying advanced physical models. Since existing process modeling programs can handle only specific physical quantities, we have developed general purpose solvers for one and two space dimensions which are able to treat an arbitrary number of coupled partial differential equations for physical quantities. In the paper we will show the general formulation of the equations which can be solved. We deal with the user-interface of the programs and the numerical problems one has to face. To demonstrate the capabilities of the programs we will show typical applications.
Keywords :
Design optimization; Differential equations; Doping profiles; Electrical capacitance tomography; Fabrication; Finite wordlength effects; Interpolation; P-n junctions; Partial differential equations; Semiconductor process modeling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22226
Filename :
1484972
Link To Document :
بازگشت