Reach-through type planar InGaAs/InP avalanche photodiode fabricated by continuous vapor phase epitaxy

Planar InGaAs/InP avalanche photodiodes were fabricated by continuous vapor phase epitaxy. The diode was configured in p+- n- -n-n- type reach-through structure to facilitate guard ring formation and to improve multiplication noise properties. The condition for achieving fast frequency response, suppressing photocarrier trapping at the InGaAs/InP heterointerface, was clarified through evaluating diode frequency response. Diode performance was confirmed in a 2 Gbit/s optical transmission experiment to exceed that for Ge-APD.