Title :
Super-low gain bandwidth and small area amplifier
Author_Institution :
Free Univ. of Brussels, Belgium
fDate :
7/18/1996 12:00:00 AM
Abstract :
A low-powered super-low gain bandwidth (SL-GBW) amplifier with a small area is discussed. The circuit has a transition Frequency fT of 38 kHz (including gain stage, A), a power consumption of 150 nW, a phase margin PM≃70°, a total area of 300×36 μm 2 and a minimum current per transistor of 7 nA which is far above the leakage current after irradiation. The circuit was implemented in the radiation hard SOI BiCMOS technology of DMILL
Keywords :
BiCMOS analogue integrated circuits; SPICE; circuit analysis computing; compensation; network topology; pulse amplifiers; radiation hardening (electronics); silicon-on-insulator; 150 nW; 38 kHz; 7 nA; DMILL; compensation amplifier; minimum current; phase margin; power consumption; radiation hard SOI BiCMOS technology; super-low gain bandwidth amplifier; transition frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960932
