Title :
1.26 μm vertical cavity laser with two InP/air-gap reflectors
Author :
Streubel, K. ; Rapp, S. ; Andre, Joao ; Chitica, N.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
fDate :
7/18/1996 12:00:00 AM
Abstract :
The fabrication and characterisation of a novel vertical cavity laser for long wavelength operation, which uses two micromachined InP/air-gap mirrors, is reported. The air gaps are realised by selective removal of GaInAs sacrificial layers. Single-mode lasing at room temperature was observed by optical pumping with output powers above 80 μW
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mirrors; optical pumping; semiconductor lasers; surface emitting lasers; 1.26 micrometre; 80 muW; GaInAsP-InP; air-gap reflectors; long wavelength operation; optical pumping; output powers; sacrificial layers; single-mode lasing; vertical cavity laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960913
