Title :
High performance millimetre-wave amplifiers with dry gate recess etched InP HEMTs
Author :
Duran, H. ; Schefer, M. ; Bachtold, W. ; Beck, M.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich
fDate :
7/18/1996 12:00:00 AM
Abstract :
Several millimetre-wave amplifier integrated circuits have been fabricated using methane-hydrogen reactive ion etching (RIE) for definition of the gate recess. Highly uniform device parameters and good microwave and noise performance have been measured. A single stage amplifier yielded a gain of 11.9 dB at 62 GHz, and a third order input intercept point of 19.5 dBm. This demonstrates the suitability of the RIE process for circuit fabrication
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; indium compounds; integrated circuit technology; millimetre wave amplifiers; sputter etching; 11.9 dB; 62 GHz; InP; InP HEMT; dry gate recess etching; gain; integrated circuit fabrication; methane-hydrogen reactive ion etching; millimetre-wave amplifier; noise; single stage amplifier; third order input intercept point;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960901
