Accurate current calculation in two-dimensional MOSFET models

Two-dimensional simulations of MOSFET´s are widely used for the design of short-channel transistors used in VLSI circuits. These models use low order methods of discretization of solution variables. In this paper, a method of current calculation is presented which works with these methods and yields good accuracy. The method uses integration of the solution variables, rather than differentiation, and is similar to applying Ohm´s law in two dimensions.