DocumentCode :
1102251
Title :
Threshold currents for AlGaAs quantum well lasers
Author :
Sugimura, Akira
Author_Institution :
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
Volume :
20
Issue :
4
fYear :
1984
fDate :
4/1/1984 12:00:00 AM
Firstpage :
336
Lastpage :
343
Abstract :
The threshold currents for AlGaAs quantum well lasers are studied theoretically. The structure dependent gain coefficient is obtained by taking into account the electron distribution in 
valleys. Theoretical threshold current densities calculated using the gain coefficient agree well with reported experimental results for separate-confinement heterostructure lasers. A design procedure for low threshold current laser is elucidated. The lowest threshold currents are 570 and 53 μA per 1 μm stripe width for modified multiple quantum well lasers with 32 percent and 90 percent reflectivity facet mirrors, respectively.
valleys. Theoretical threshold current densities calculated using the gain coefficient agree well with reported experimental results for separate-confinement heterostructure lasers. A design procedure for low threshold current laser is elucidated. The lowest threshold currents are 570 and 53 μA per 1 μm stripe width for modified multiple quantum well lasers with 32 percent and 90 percent reflectivity facet mirrors, respectively.Keywords :
Gallium materials/lasers; Electrons; Laser modes; Laser theory; Lattices; Optical design; Quantum mechanics; Quantum well lasers; Radiative recombination; Reflectivity; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1984.1072405
Filename :
1072405
Link To Document :
