DocumentCode
1102251
Title
Threshold currents for AlGaAs quantum well lasers
Author
Sugimura, Akira
Author_Institution
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
Volume
20
Issue
4
fYear
1984
fDate
4/1/1984 12:00:00 AM
Firstpage
336
Lastpage
343
Abstract
The threshold currents for AlGaAs quantum well lasers are studied theoretically. The structure dependent gain coefficient is obtained by taking into account the electron distribution in 
valleys. Theoretical threshold current densities calculated using the gain coefficient agree well with reported experimental results for separate-confinement heterostructure lasers. A design procedure for low threshold current laser is elucidated. The lowest threshold currents are 570 and 53 μA per 1 μm stripe width for modified multiple quantum well lasers with 32 percent and 90 percent reflectivity facet mirrors, respectively.
valleys. Theoretical threshold current densities calculated using the gain coefficient agree well with reported experimental results for separate-confinement heterostructure lasers. A design procedure for low threshold current laser is elucidated. The lowest threshold currents are 570 and 53 μA per 1 μm stripe width for modified multiple quantum well lasers with 32 percent and 90 percent reflectivity facet mirrors, respectively.Keywords
Gallium materials/lasers; Electrons; Laser modes; Laser theory; Lattices; Optical design; Quantum mechanics; Quantum well lasers; Radiative recombination; Reflectivity; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1984.1072405
Filename
1072405
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