DocumentCode :
1102258
Title :
170 GHz transferred-substrate heterojunction bipolar transistor
Author :
Bhattacharya, U. ; Samoska, L. ; Pullela, R. ; Guthrie, J. ; Lee, Q. ; Agarwal, B. ; Mensa, D. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
32
Issue :
15
fYear :
1996
fDate :
7/18/1996 12:00:00 AM
Firstpage :
1405
Lastpage :
1406
Abstract :
The authors report transferred-substrate HBTs with an fmax of 170 GHz and fτ of 120 GHz. Devices scaled to deep submicrometre dimensions should obtain an fmax of ~500 GHz
Keywords :
capacitance; characteristics measurement; heterojunction bipolar transistors; 120 GHz; 170 GHz; collector-base capacitance; current-gain cutoff frequency; deep submicrometre dimensions; power-gain cutoff frequency; transferred-substrate HBTs;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960898
Filename :
511148
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1102258
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