Title :
Comparison of dry etch techniques for GaN
Author :
Shul, R.J. ; McClellan, G.B. ; Pearton, S.J. ; Abernathy, C.R. ; Constantine, C. ; Barratt, C.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
7/18/1996 12:00:00 AM
Abstract :
Dry etching of GaN in Cl2/H2/CH4/Ar has been compared using electron cyclotron resonance (ECR), inductively coupled plasma (ICP), and reactive ion etch (RIE) systems. GaN etch rates and surface morphology were obtained as a function of RF power, and showed significant improvements under high density plasma conditions
Keywords :
III-V semiconductors; cyclotron resonance; gallium compounds; sputter etching; GaN; RF power; dry etch techniques; electron cyclotron resonance; etch rates; high density plasma conditions; inductively coupled plasma; reactive ion etch; surface morphology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960943
