DocumentCode :
1102305
Title :
Determination of the temporal plasma density above a semiconductor bridge
Author :
Kim, J. ; Song, Y.-H. ; Nam, K.-S.
Author_Institution :
Semicond. Div., Electron. & Commun. Res. Inst., Taejon, South Korea
Volume :
32
Issue :
15
fYear :
1996
fDate :
7/18/1996 12:00:00 AM
Firstpage :
1412
Lastpage :
1413
Abstract :
A new method of determining the temporal plasma density above a semiconductor bridge using a microwave resonator probe has been proposed. Experimental results indicate that the plasma density is observed to increase to a peak value of 4.2×1011 cm-1 and decay exponentially with time, which is consistent with diffusion dominating the plasma transport
Keywords :
microwave measurement; plasma density; plasma probes; plasma production; plasma transport processes; semiconductor devices; diffusion; microwave resonator probe; plasma transport; semiconductor bridge; temporal plasma density;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960899
Filename :
511153
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1102305
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