DocumentCode :
1102326
Title :
High fmax carbon-doped base InP/lnGaAs heterojunction bipolar transistors grown by MOCVD
Author :
Ito, H. ; Yamahata, S. ; Shigekawa, N. ; Kurishima, K.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Volume :
32
Issue :
15
fYear :
1996
fDate :
7/18/1996 12:00:00 AM
Firstpage :
1415
Lastpage :
1416
Abstract :
The authors report excellent microwave characteristics of C-doped base InP/InGaAs heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapour deposition (MOCVD). A combination of a low resistance base layer (2.5×1019 cm-3, 700 Å) and a very narrow emitter mesa structure (0.5×4.7 μm 2) enabled us to achieve a record maximum oscillation frequency (fmax) of 170 GHz at Jc=1.7×105 A/cm2 for C-doped base InP/InGaAs HBTs
Keywords :
III-V semiconductors; carbon; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor doping; semiconductor growth; 170 GHz; InP-InGaAs:C; MOCVD growth; carbon-doped base InP/lnGaAs heterojunction bipolar transistor; maximum oscillation frequency; metalorganic chemical vapour deposition; microwave characteristics;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960915
Filename :
511155
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1102326
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