Title :
High performance InP-based heterostructure barrier varactors in single and stack configuration
Author :
Lheurette, E. ; Mounaix, P. ; Salzenstein, P. ; Mollot, F. ; Lippens, D.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
fDate :
7/18/1996 12:00:00 AM
Abstract :
Single (SHBV) and dual (DHBV) heterostructure barrier varactors with AlAs/In0.52Al0.48As blocking conduction layers have been fabricated and characterised. The devices, whose electrical properties scale with layer complexity exhibit, for a DHBV scheme, leakage currents as low as 10A/cm2 at 12 V, a zero bias capacitance of 1 fF/μm2, and a capacitance ratio of 5:1
Keywords :
III-V semiconductors; indium compounds; varactors; 12 V; AlAs-In0.52Al0.48As; DHBV; InP; SHBV; blocking conduction layer; capacitance ratio; dual heterostructure barrier varactor; electrical properties; leakage current; single heterostructure barrier varactor; stack configuration; zero bias capacitance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960893
