Title :
Pseudomorphic step-doped channels field-effect transistor (SDCFET)
Author :
Laih, L.-W. ; Tsai, J.H. ; Wu, C.-Z. ; Lin, K.W. ; Cheng, C.C. ; Liu, W.C. ; Lour, W.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
7/18/1996 12:00:00 AM
Abstract :
A new high performance field-effect transistor using step-doped n-In0.15Ga0.85As channels was fabricated and demonstrated. For a 1×100 μm2 device, a high gate breakdown voltage of 15 V, a maximum drain saturation current of 735 mA/mm, a maximum transconductance of 200 mS/mm, and a wide gate voltage range >3 V, with the transconductance >60 mS/mm, are obtained
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; In0.15Ga0.85As; SDCFET; breakdown voltage; drain saturation current; gate voltage range; pseudomorphic step-doped channels field-effect transistor; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960947
