• DocumentCode
    1102343
  • Title

    Pseudomorphic step-doped channels field-effect transistor (SDCFET)

  • Author

    Laih, L.-W. ; Tsai, J.H. ; Wu, C.-Z. ; Lin, K.W. ; Cheng, C.C. ; Liu, W.C. ; Lour, W.S.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1418
  • Lastpage
    1419
  • Abstract
    A new high performance field-effect transistor using step-doped n-In0.15Ga0.85As channels was fabricated and demonstrated. For a 1×100 μm2 device, a high gate breakdown voltage of 15 V, a maximum drain saturation current of 735 mA/mm, a maximum transconductance of 200 mS/mm, and a wide gate voltage range >3 V, with the transconductance >60 mS/mm, are obtained
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; In0.15Ga0.85As; SDCFET; breakdown voltage; drain saturation current; gate voltage range; pseudomorphic step-doped channels field-effect transistor; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960947
  • Filename
    511157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102343