Measurement of intrinsic capacitance of lightly doped drain (LDD) MOSFET´s

Intrinsic capacitance of lightly doped drain (LDD) MOSFET´s is measured by means of a four-terminal method without using any on-chip measurement circuits. The gate-to-drain capacitance Cgdof LDD MOSFET´s is smaller than that of conventional MOSFET´s in the saturation region. The technique is applied to determine the effective channel length.