• DocumentCode
    1102351
  • Title

    Selectively grown ohmic contacts to δ-doped diamond films

  • Author

    Shim, K.-H. ; Lim, J.-T.

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1419
  • Lastpage
    1421
  • Abstract
    δ-doped homoepitaxial diamond films were grown by microwave CVD (MWCVD) in order to simultaneously achieve convenient carrier sheet concentration (Ns<1013 cm-2) and low acceptor activation energy. The δ-doped layers are contacted laterally using selectively grown highly doped p+-diamond. Si-based contacts were deposited and a temperature independent specific contact resistance of 7×10-5 Ω cm2 was extracted from TLM-measurements between room temperature and 400°C
  • Keywords
    CVD coatings; contact resistance; diamond; elemental semiconductors; ohmic contacts; semiconductor epitaxial layers; δ-doped homoepitaxial diamond film; C; TLM measurement; acceptor activation energy; carrier sheet concentration; highly doped p+-diamond; microwave CVD; ohmic contact; selective growth; silicon; specific contact resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960927
  • Filename
    511158
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102351