Electrical properties for MOS LSI´s fabricated using stacked Oxide SWAMI technology

The stacked oxide SWAMI (STOMI) process, in which the SWAMI process is improved by employing CVD oxide deposition on the first nitride film, has been developed. The stacked oxide plays an important role in process stability and controllability in fabricating VLSI devices. A large punchthrough voltage between diffused layers, a small sidewall capacitance for the n⁺-p junction, and a small narrow-channel effect for silicon gate n-channel MOSFET´s have been achieved by the STOMI process. A 256-kbit dynamic RAM with high performance has also been fabricated successfully. The STOMI process is particularly advantageous as an isolation technique applicable to advanced devices with small (< 1 µm) geometries.