DocumentCode :
1102665
Title :
Fundamentals of memory switching in vertical polycrystalline silicon structures
Author :
Malhotra, Vinod ; Mahan, John E. ; Ellsworth, Daniel L.
Author_Institution :
Colorado State University, Fort Collins, CO
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2441
Lastpage :
2449
Abstract :
The fundamentals of memory switching in vertical LPCVD polysilicon structures have been investigated. In the initial state, 4-70 µm2devices exhibit effective resistances (at 5 V) in the high megaohm range, with current transport via thermionic emission of electrons over grain boundary potential barriers. An increase in conductance by approximately five orders of magnitude is achieved by a 10-20 V programming pulse of tens of microseconds duration with a few milliamps of current required. A moderately doped filamentary region is created, exhibiting single-crystal silicon transport phenomena. With regard to practical device fabrication, control of thin film interactions is critical. Barrier layers are employed to suppress Al-Si interaction at the top contact and to decrease the effective grain size of the polysilicon film by limiting the epitaxial realignment of the grains near the single-crystal substrate.
Keywords :
Conducting materials; Electron emission; Fabrication; Grain boundaries; Implants; PROM; Silicon; Thermionic emission; Thin film devices; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22293
Filename :
1485039
Link To Document :
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