Title :
IIA-4 microwave high-power performance of double heterojunction high electron mobility transistor
Author :
Hikosaka, K. ; Hirachi, Yasutake ; Mimura, Takashi ; Abe, Makoto
fDate :
11/1/1985 12:00:00 AM
Keywords :
DH-HEMTs; Electron mobility; Gallium arsenide; HEMTs; Heterojunctions; Laboratories; MESFETs; MODFETs; Microwave devices; Power generation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22311
