DocumentCode

1102924

Title

IIB-1 the role of stress in two-dimensional silicon oxidation

Author

Saraswat, Krishna C. ; McVittie, James P. ; Nix, W.D.

Volume

32

Issue

11

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

2530

Lastpage

2531

Keywords

Doping; EPROM; Etching; Oxidation; Semiconductor process modeling; Silicon; Stress; Temperature; Testing; Viscosity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1985.22316

Filename

1485062