DocumentCode :
1102935
Title :
IIB-3 defect-free selective epitaxial technology for fine isolation
Author :
Kasai, Naoki ; Kitajima, H. ; Ishitani, A.
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2531
Lastpage :
2532
Keywords :
Boron; CMOS technology; Etching; Filling; Graphics; Insulation; Isolation technology; Microelectronics; National electric code; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22317
Filename :
1485063
Link To Document :
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