Title :
IIB-2 process-dependent properties of three-dimensional capacitors
Author :
Koburger, C. ; White, Frank ; Nesbit, L. ; Emmanuel, Sabu
fDate :
11/1/1985 12:00:00 AM
Keywords :
Degradation; Electron devices; Etching; Filling; Isolation technology; MOS capacitors; National electric code; Plasma displays; Plasma properties; Surface topography;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22318
