DocumentCode :
1102989
Title :
IIB-6 shallow p+-n junction for CMOS VLSI application using germanium preamorphization
Author :
Liu, Jiangchuan ; Wortman, J.J. ; Fair, R.B.
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2533
Lastpage :
2533
Keywords :
Fabrication; Germanium; Heat treatment; Implants; Ion implantation; Leakage current; Rapid thermal annealing; Silicon; Temperature; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22322
Filename :
1485068
Link To Document :
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