Title :
IIB-6 shallow p+-n junction for CMOS VLSI application using germanium preamorphization
Author :
Liu, Jiangchuan ; Wortman, J.J. ; Fair, R.B.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Fabrication; Germanium; Heat treatment; Implants; Ion implantation; Leakage current; Rapid thermal annealing; Silicon; Temperature; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22322
