Title :
IIIB-7 observation of velocity overshoot in deep submicrometer (0.08 µm) channel MOSFETS in Si
Author :
Chou, Sheng ; Antoniadis, Dimitri A. ; Smith, Henry I
fDate :
11/1/1985 12:00:00 AM
Keywords :
Contact resistance; Electron devices; Logic devices; MOS devices; MOSFET circuits; Performance evaluation; Silicon; Standards development; Superlattices; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22335
