DocumentCode :
1103160
Title :
IVA-2 Theory of electron and hole impact ionization in quantum well superlattice, staircase, and channeling avalanche photodiodes
Author :
Brennan, K.F.
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2539
Lastpage :
2539
Keywords :
Avalanche photodiodes; Charge carrier processes; Diodes; Gallium arsenide; Impact ionization; Lattices; Photoluminescence; Quantum mechanics; Signal to noise ratio; Superlattices;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22338
Filename :
1485084
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1103160
