DocumentCode :
1103247
Title :
IVA-8 low-threshold AlGaAs laser diodes fabricated by silicon impurity-induced disordering
Author :
Thornton, R.L. ; Burnham, R.D. ; Paoli, T.L. ; Deppe, Dennis G.
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2541
Lastpage :
2542
Keywords :
Annealing; Diode lasers; Laboratories; Optical device fabrication; Optical devices; Power lasers; Semiconductor lasers; Silicon; Threshold current; Zinc;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22345
Filename :
1485091
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1103247
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