DocumentCode :
1103249
Title :
Mask topography effects in projection printing of phase-shifting masks
Author :
Wong, Alfred K. ; Neureuther, Andrew R.
Author_Institution :
California Univ., Berkeley, CA, USA
Volume :
41
Issue :
6
fYear :
1994
fDate :
6/1/1994 12:00:00 AM
Firstpage :
895
Lastpage :
902
Abstract :
Topography effects of glass edges in phase-shifting masks (PSM´s) on image quality are assessed using the rigorous electromagnetic simulation program TEMPEST on three different optical systems for four PSM technologies including alternating, rim, attenuated, and chromeless. The scalar and thin mask approximations used in simulation programs such as SPLAT can be in error by as much as 20% for certain classes of shifter edges. A feature size independent bias of 0.021 λ/NA per edge is recommended for alternating masks with vertical edges because light is lost near the etched glass edges. No direct electromagnetic interaction between chromium edges and shifter edges was found for rim phase-shifting masks. The rim dimension can thus be designed solely on the basis of the sidelobe level and peak intensity. For attenuated PSM, edge effects are less severe but sidelobe problems occur. For a center to sidelobe contrast of 0.6 over a DOF of 3 RU, a lower transmission of 4% is recommended. For chromeless PSM, the imbalance in image peaks is shown to be affected by the optical stepper parameters. In any PSM technology, it appears that a 360° glass protrusion may produce a drastic drop in intensity due to resonant effects
Keywords :
digital simulation; electronic engineering computing; lithography; masks; surface topography; SPLAT; TEMPEST; alternating masks; attenuated masks; chromeless masks; electromagnetic simulation program; feature size independent bias; glass edges; image quality; mask topography effects; phase-shifting masks; projection printing; resonant effects; rim masks; sidelobe problems; Chromium; Computer simulation; Etching; Glass; Image quality; Optical attenuators; Optical scattering; Printing; Resonance; Surfaces;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.293299
Filename :
293299
Link To Document :
بازگشت