DocumentCode :
1103264
Title :
IVB-3 dynamic trapping-detrapping phenomena in thermal SiO2
Author :
Nissan-Cohen, Y. ; Shappir, Joseph ; Frohman-Bentchkowsky, D.
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2542
Lastpage :
2543
Keywords :
CMOS technology; Charge measurement; Circuits; Current measurement; Electron traps; Impact ionization; MOSFETs; Semiconductor device modeling; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22347
Filename :
1485093
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1103264
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