DocumentCode

1103264

Title

IVB-3 dynamic trapping-detrapping phenomena in thermal SiO2

Author

Nissan-Cohen, Y. ; Shappir, Joseph ; Frohman-Bentchkowsky, D.

Volume

32

Issue

11

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

2542

Lastpage

2543

Keywords

CMOS technology; Charge measurement; Circuits; Current measurement; Electron traps; Impact ionization; MOSFETs; Semiconductor device modeling; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1985.22347

Filename

1485093