Title :
Blue lasing at room temperature in an optically pumped lattice-matched AlInN=GaN VCSEL structure
Author :
Feltin, E. ; Christmann, G. ; Dorsaz, J. ; Castiglia, A. ; Carlin, J.-F. ; Butté, R. ; Grandjean, N. ; Christopoulos, S. ; Baldassarri, G. ; Von Högersthal, Höger ; Grundy, A.J.D. ; Lagoudakis, P.G. ; Baumberg, J.J.
Author_Institution :
Inst. of Quantum Electron. & Photonics, Lausanne
Abstract :
Laser action with low threshold average pump power density (~50 W - cm-2 ) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Bragg reflector (DBR) and a top dielectric DBR. The cavity region, formed by n- and p-type GaN layers surrounding only three InGaN/GaN quantum wells, corresponds to a typical active region suitable for an electrically driven VCSEL. In addition to low threshold, a spontaneous emission coupling factor beta ~ 2 x 10-10 is derived for this ready-to-be-processed laser structure.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser cavity resonators; optical pumping; quantum well lasers; surface emitting lasers; wide band gap semiconductors; DBR; VCSEL structure; blue lasing; distributed Bragg reflector; emission coupling factor; optical pumping; quantum wells; ready-to-be-processed laser structure; vertical cavity surface emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071226
