DocumentCode

1103273

Title

IVB-2 Inversion layer mobility of MOSFET´s with Nitrided Oxide gate dielectrics

Author

Schmidt, M.A. ; Senturia, S.D.

Volume

32

Issue

11

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

2542

Lastpage

2542

Keywords

Annealing; Capacitance-voltage characteristics; Degradation; Dielectrics; Doping; Electron mobility; Electron traps; Laboratories; MOSFETs; Oxidation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1985.22348

Filename

1485094