Title :
A heterojunction bipolar transistor with a thin /spl alpha/-Si emitter
Author :
Ping Li ; Li, Ping ; Salama, C. Andre T
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fDate :
6/1/1994 12:00:00 AM
Abstract :
In this paper, a modified silicon heterojunction bipolar transistor is proposed and demonstrated. The structure uses a very thin n/sup +/ amorphous silicon layer as the emitter to enhance the emitter injection efficiency and reduce the emitter resistance as well as improve the frequency response of the device.<>
Keywords :
amorphous semiconductors; current density; elemental semiconductors; frequency response; heterojunction bipolar transistors; semiconductor thin films; silicon; Si; emitter injection efficiency; emitter resistance; frequency response; heterojunction bipolar transistor; modified silicon heterojunction bipolar transistor; thin /spl alpha/-Si emitter; very thin n/sup +/ amorphous silicon layer; Amorphous silicon; Charge carrier processes; Councils; Current density; Doping; Electron emission; Frequency response; Heterojunction bipolar transistors; Photonic band gap; Power engineering and energy;
Journal_Title :
Electron Devices, IEEE Transactions on
