DocumentCode
1103319
Title
A heterojunction bipolar transistor with a thin /spl alpha/-Si emitter
Author
Ping Li ; Li, Ping ; Salama, C. Andre T
Author_Institution
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Volume
41
Issue
6
fYear
1994
fDate
6/1/1994 12:00:00 AM
Firstpage
932
Lastpage
935
Abstract
In this paper, a modified silicon heterojunction bipolar transistor is proposed and demonstrated. The structure uses a very thin n/sup +/ amorphous silicon layer as the emitter to enhance the emitter injection efficiency and reduce the emitter resistance as well as improve the frequency response of the device.<>
Keywords
amorphous semiconductors; current density; elemental semiconductors; frequency response; heterojunction bipolar transistors; semiconductor thin films; silicon; Si; emitter injection efficiency; emitter resistance; frequency response; heterojunction bipolar transistor; modified silicon heterojunction bipolar transistor; thin /spl alpha/-Si emitter; very thin n/sup +/ amorphous silicon layer; Amorphous silicon; Charge carrier processes; Councils; Current density; Doping; Electron emission; Frequency response; Heterojunction bipolar transistors; Photonic band gap; Power engineering and energy;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.293304
Filename
293304
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