Title :
VA-5 pseudomorphic GaInAs/GaAs single quantum well high electron mobility transistor
Author :
Rosenberg, J.J. ; Kirchner, Peter D. ; Woodall, Jerry M.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Current density; Doping; Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; MOSFETs; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22357
