DocumentCode

1103422

Title

VB-3 polycrystalline silicon devices for large-area NMOS and CMOS logic applications

Author

Hawkins, W.G.

Volume

32

Issue

11

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

2548

Lastpage

2548

Keywords

Aluminum; Annealing; CMOS logic circuits; Fabrication; Hydrogen; Logic devices; MOS devices; Plasma temperature; Silicon devices; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1985.22362

Filename

1485108