DocumentCode
1103431
Title
VB-4 Comparison of different techniques for passivation of small-grain poly-Si MOSFET´s
Author
Rodder, M. ; Madan, S.
Volume
32
Issue
11
fYear
1985
fDate
11/1/1985 12:00:00 AM
Firstpage
2548
Lastpage
2549
Keywords
Dielectric substrates; Encapsulation; Hydrogen; Passivation; Plasma devices; Plasma sources; Plasma temperature; Random access memory; Rapid thermal annealing; Three-dimensional integrated circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22363
Filename
1485109
Link To Document