• DocumentCode
    1103459
  • Title

    Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO2 as gate oxide

  • Author

    Sugiura, S. ; Kishimoto, S. ; Mizutani, T. ; Kuroda, M. ; Ueda, T. ; Tanaka, T.

  • Author_Institution
    Nagoya Univ., Nagoya
  • Volume
    43
  • Issue
    17
  • fYear
    2007
  • Firstpage
    952
  • Lastpage
    953
  • Abstract
    Enhancement-mode n-channel GaN MOSFETs with overlap gate structure using thick SiO2 as a gate insulator have been fabricated. The maximum transconductance of 45 mS/mm is seven times larger, to our knowledge, than the best-reported value of GaN MOSFETs with SiO2 gate oxide.
  • Keywords
    MOSFET; HfO2; SiO2; enhancement-mode n-channel MOSFET; gate insulator; gate oxide; metal-oxide-semiconductor field effect transistor; overlap gate structure; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20071814
  • Filename
    4293115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1103459