Title :
VIA-3 GaAs MESFET´s and ring oscillators on MOCVD grown GaAs/Si
Author :
Nonaka, Tomomi ; Akiyama, Masanori ; Kawarada, Y. ; Kaminishi, K.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Electron devices; Fabrication; Gallium arsenide; MESFETs; MOCVD; Microwave oscillators; Research and development; Ring oscillators; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22371
