DocumentCode
1103559
Title
Extraction of contact resistivity on Kelvin L-resistor structures
Author
Santander, Joaquín ; Lozano, Manuel ; Cané, Carles
Author_Institution
Centro Nacional de Microelectron., Bellaterra, Spain
Volume
41
Issue
6
fYear
1994
fDate
6/1/1994 12:00:00 AM
Firstpage
1073
Lastpage
1074
Abstract
The D and L-Resistor types of the Kelvin cross resistor are the main test structures used to monitor contact resistance and contact resistivity. Despite the fact that the D type is more sensitive, both are widely used. A procedure is presented for the L type structure which permits the accurate, easy and fast extraction of contact resistivity, taking into account the effects of spreading currents
Keywords
contact resistance; digital simulation; electric resistance measurement; ohmic contacts; semiconductor device models; semiconductor-metal boundaries; D-resistor types; Kelvin cross-resistor structures; L-resistor types; contact resistance; contact resistivity; ohmic contacts; spreading currents; test structures; Conductivity; Contact resistance; Doping; Electrical resistance measurement; Fabrication; Kelvin; Monitoring; Ohmic contacts; Resistors; Testing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.293325
Filename
293325
Link To Document