• DocumentCode
    1103568
  • Title

    VIA-7 p-channel GaAs SIS FET self-aligned by ion-implantation

  • Author

    Matsumoto, Kaname ; Ogura, M. ; Wada, Tomotaka ; Yao, Tingfeng ; Hayashi, Yasuhiro ; Hashizume, Nobuya ; Kato, Masaaki ; Endo, T. ; Yamazaki, Hiroshi ; Inage, H. ; Yamada, Makoto

  • Volume
    32
  • Issue
    11
  • fYear
    1985
  • fDate
    11/1/1985 12:00:00 AM
  • Firstpage
    2553
  • Lastpage
    2553
  • Keywords
    Avalanche breakdown; Electrodes; FETs; Filling; Gallium arsenide; Indium phosphide; Insulation; Leakage current; MESFETs; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22375
  • Filename
    1485121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1103568