DocumentCode

1103593

Title

VIB-4 the effect of channel length and gate oxide thickness on the performance of insulated gate transistors

Author

Chow, T.P. ; Baliga, B. Jayant ; Chang, M.F.

Volume

32

Issue

11

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

2554

Lastpage

2554

Keywords

Conductivity; Current measurement; Doping; Electron devices; Insulation; MOSFET circuits; Power MOSFET; Power electronics; Power transistors; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1985.22377

Filename

1485123