Title :
VIB-4 the effect of channel length and gate oxide thickness on the performance of insulated gate transistors
Author :
Chow, T.P. ; Baliga, B. Jayant ; Chang, M.F.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Conductivity; Current measurement; Doping; Electron devices; Insulation; MOSFET circuits; Power MOSFET; Power electronics; Power transistors; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22377
