DocumentCode
1103618
Title
VIB-6 measurement of minority-carrier transport parameters in heavily doped n-type silicon
Author
Swanson, Richard M.
Volume
32
Issue
11
fYear
1985
fDate
11/1/1985 12:00:00 AM
Firstpage
2555
Lastpage
2555
Keywords
Bipolar transistors; Current measurement; Doping; Laboratories; Length measurement; Photonic band gap; Semiconductor process modeling; Silicon; Solid state circuits; Temperature dependence;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22380
Filename
1485126
Link To Document